Samsung was the first company in the world to realize the process of computing in MRAM.

Magneto-resistive RAM has the potential to replace conventional DRAM, with many advantages. However, when it comes to computing directly in memory, there are a number of problems.

As stated in the scientific work of Samsung scientists, the development of a magnetoresistive random access memory array with spin moment transfer remains a difficult task, despite the practical advantages of the technology. The difficulty is due to the low resistance of the MRAM, which would result in high power consumption in a conventional matrix array using current summation for analog multiply-accumulate operations. The company created a 64×64 jumper array based on MRAM cells that overcome the low resistance problem with an architecture that uses resistance summation for analog multiply-accumulate operations. The array is integrated with readout electronics based on 28nm CMOS technology. Using this array, a two-level perceptron was implemented to classify 10,000 handwritten digits with 93.23% accuracy. In emulation of a deeper eight-layer Visual Geometry Group-8 neural network with measured errors, the classification accuracy increases to 98.86%. Samsung also used an array to implement one layer in a ten-layer neural network, and an accuracy of 93.4% was achieved in the face recognition task.

Samsung's development could enable the use of MRAM computing to create AI, including as a platform for simulating the brain by simulating brain synapse connections.

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